Interfacial Microstructure of Silicon Carbide and Titanium Aluminide Joints Produced by Solid-State Diffusion Bonding
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چکیده
منابع مشابه
Titanium foams produced by solid-state replication of NaCl powders
Open-celled titanium foams were fabricated by vacuum hot pressing of a blend of Ti and NaCl powders followed by NaCl removal in water. Densification kinetics of the Ti/NaCl blends are measured at 780 ◦C at various pressures (30–50MPa), NaCl volume fractions (30–70%) and NaCl powder sizes (50–500 m). As compared to pure Ti powders, densification kinetics of the blends is faster for relative dens...
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Solid-state direct diffusion bonding of commercially pure Titanium (Cp-Ti) and precipitation hardening stainless steel (PHSS) has been carried out in the temperature range of 800°C to 1000°C with an interval of 50°C for 3.6 ks under 3.5 Mpa uniaxial load in (4 to 6)×10 Pa vacuum. The effects of temperatures have been investigated with reference to bond strength. The examination revealed that th...
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In this study, diffusion bonding between titanium and AISI 304 austenitic stainless steel by Ag interlayer was investigated. In order to carry out this research, samples prepared after surface preparation were placed inside the fixture and placed at the temperatures of 750,800 and 850 °C in the 30,60 and 90 min in the furnace under argon protective gas. The phase transformation and microstructu...
متن کاملMicrostructure and mechanical properties evaluation of diffusion bonded joints of titanium to AISI 304 austenitic stainless steel
In this study, diffusion bonding between titanium and AISI 304 austenitic stainless steel by Ag interlayer was investigated. In order to carry out this research, samples prepared after surface preparation were placed inside the fixture and placed at the temperatures of 750,800 and 850 °C in the 30,60 and 90 min in the furnace under argon protective gas. The phase transformation and microstructu...
متن کاملTitanium Impurities in Silicon, Diamond, and Silicon Carbide
Since transition metal impurities affect the electronic and optical properties of semiconductors [1], it is important to understand the role of such unavoidable impurities on those properties. At the same time, transition metals in semiconductors can be used in other unusual situations. The energy levels related to transition metal impurities are aligned with respect to each other for the same ...
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ژورنال
عنوان ژورنال: MATERIALS TRANSACTIONS
سال: 2004
ISSN: 1345-9678,1347-5320
DOI: 10.2320/matertrans.45.2734